Title:
FIELD-EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2017168768
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a field-effect transistor that is suitable for use in a high frequency band, and to provide a method of manufacturing the same, and to obtain a field-effect transistor capable of improving pulse characteristics.SOLUTION: A field-effect transistor comprises: a semiconductor layer with a groove; an insulating film arranged on an upper surface of the semiconductor layer, and that has an opening on an upper surface of the groove; and a gate electrode buried in the opening so as to be contacted with a lateral face and a bottom face of the groove, and that has a part contacted with an upper surface of the insulating film at both sides of the opening. The gate electrode has a T-shaped cross section of which a width at the other end part is wider than a width at an upper surface of the insulating film.SELECTED DRAWING: Figure 1
Inventors:
NAKAMOTO TAKAHIRO
Application Number:
JP2016054786A
Publication Date:
September 21, 2017
Filing Date:
March 18, 2016
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L29/41; H01L21/28; H01L21/338; H01L29/423; H01L29/778; H01L29/812
Domestic Patent References:
| JP2007081371A | 2007-03-29 | |||
| JPH11265898A | 1999-09-28 | |||
| JPH03239325A | 1991-10-24 | |||
| JP2013077629A | 2013-04-25 | |||
| JPH10256533A | 1998-09-25 | |||
| JPH06209019A | 1994-07-26 | |||
| JP2009524242A | 2009-06-25 |
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Yoshimi Kuno
Hideki Takahashi
Yoshimi Kuno