Title:
スピン依存伝達特性を有する電界効果トランジスタ及びそれを用いた不揮発性メモリ
Document Type and Number:
Japanese Patent JP5121793
Kind Code:
B2
Abstract:
When a gate voltage VGS is applied, the Schottky barrier width due to the metallic spin band in the ferromagnetic source is decreased, and up-spin electrons from the metallic spin band are tunnel-injected into the channel region. However, down-spin electrons from the nonmagnetic contact (3b) are not injected because of the energy barrier due to semiconductive spin band of the ferromagnetic source (3a). That is, only up-spin electrons are injected into the channel layer from the ferromagnetic source (3a). If the ferromagnetic source (3a) and the ferromagnetic drain (5a) are parallel magnetized, up-spin electrons are conducted through the metallic spin band of the ferromagnetic drain to become the drain current. Contrarily, if the ferromagnetic source (3a) and the ferromagnetic drain (5a) are antiparallel magnetized, up-spin electrons cannot be conducted through the ferromagnetic drain (5a) because of the energy barrier Ec due to the semiconductive spin band in the ferromagnetic drain (5a). Thus, a high-performance high-degree of integration non-volatile memory composed of MISFETs operating on the above operating principle can be fabricated.
Inventors:
Satoshi Sugawara
Masaaki Tanaka
Masaaki Tanaka
Application Number:
JP2009184749A
Publication Date:
January 16, 2013
Filing Date:
August 07, 2009
Export Citation:
Assignee:
Japan Science and Technology Agency
International Classes:
H01L29/66; G11C11/16; H01L21/8246; H01L27/105; H01L27/22; H01L29/82
Domestic Patent References:
| JP2001203332A | ||||
| JP11204854A | ||||
| JP6097531A | ||||
| JP2002110989A | ||||
| JP11163339A | ||||
| JP2002026417A | ||||
| JP2003092412A | ||||
| JP2004014806A |
Attorney, Agent or Firm:
Shuhei Katayama
Teruo Yokoyama
Teruo Yokoyama