Title:
FIELD EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JP3910971
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve driving force by reducing contact resistance while using a schottky source-drain structure for making the junction of a source-drain shallower and decreasing parasitic resistance.
SOLUTION: In a field effect transistor which comprises a first semiconductor region 11a constituting a channel region, a gate electrode 14 formed on the first semiconductor region 11a via a gate insulating film 13, a source electrode 15 and a drain electrode 17 which are formed in such a manner that they sandwich the first semiconductor region 11a from a channel length direction, and second semiconductor regions 16, 18 which are formed between the first semiconductor region 11a and the source electrode 15, and between the first semiconductor region 11a and the drain electrode 17 respectively, and have impurity concentrations higher than that of the first semiconductor region 11a, the source electrode 15 and the drain electrode 17 are offset with respect to the gate electrode 14, and the second semiconductor region 16 at a source electrode 15 side has smaller thickness than a thickness in which the whole of the channel length direction is depleted in a state of equilibrium.
Inventors:
Yukio Nakabayashi
Kazumi Nishinohara
Kinoshita Atsuhiro
Junji Koga
Kazumi Nishinohara
Kinoshita Atsuhiro
Junji Koga
Application Number:
JP2004092537A
Publication Date:
April 25, 2007
Filing Date:
March 26, 2004
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L29/417; H01L29/78; H01L21/00; H01L21/336; H01L29/76; H01L29/772; H01L29/786; (IPC1-7): H01L29/78; H01L29/417; H01L29/786
Domestic Patent References:
| JP6224428A | ||||
| JP59047767A | ||||
| JP59032172A | ||||
| JP2002094058A |
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Sadao Muramatsu
Ryo Hashimoto