PURPOSE: To effectively control punch-through currents by a method wherein a Schottky metal is buried in the vicinity of a channel for the suppression of carrier distribution spatial expansion and drain depletion layer spatial expan sion.
CONSTITUTION: Ni and Si are simultaneously evaporated on a low impurity concentration p-type (100) Si substrate 11, which is accomplished by molecular beam epitaxy at 400°C. Patterning photolithography is then performed for the conversion of the Ni and Si into a single-crystal NiSi2 layer 12. Molecular beam epitaxy is applied for the second time for the growth of a single crystal p-type Si 13 by 500 on a specimen, which results in a structure wherein the single-crystal NiSi2 layer 12 is buried as a Schottky metal in the single-crystal Si. A gate electrode 14, a source electrode 15, and a drain electrode 16 are built on the single-crystal p-type Si layer 13.
| JP2017112335 | SEMICONDUCTOR ELEMENT MANUFACTURING METHOD |
| JP2001298193 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
YAMAGUCHI KEN
SHIRAKI YASUHIRO
NAKAMURA NOBUO
| JPS61116875A | 1986-06-04 | |||
| JPS6190469A | 1986-05-08 | |||
| JPS58182880A | 1983-10-25 |