Title:
電界電子放出膜、電界電子放出素子、発光素子およびそれらの製造方法
Document Type and Number:
Japanese Patent JP7029331
Kind Code:
B2
Abstract:
To provide: a field electron emission film superior in power saving property, in which a low applied voltage is required for achieving a fixed quantity of field electron emission; a field electron emission element; a light-emitting element; and manufacturing methods thereof.SOLUTION: A field electron emission film has a structure in which a groove having such a length that the total extension per 1 mmis 2 mm or more is formed in a surface of a film includes 50-99.9 mass% of tin-doped indium oxide and 0.1-20 mass% of carbon nanotube and the carbon nanotube is exposed in a wall face of the groove. In the field electron emission film, a variation coefficient about the depth of the groove is 0.30 or less. The field electron emission film can be obtained by forming a carbon nanotube-containing ITO film on a substrate and then forming a groove-forming process on the ITO film at a fixed position thereof more than once to form a groove having a predetermined depth, where the carbon nanotube to make an emitter is exposed.SELECTED DRAWING: Figure 3
Inventors:
Subordinate Horihiro
Kazuyuki Taji
Kensaku Fukuda
Kazuyuki Taji
Kensaku Fukuda
Application Number:
JP2018061538A
Publication Date:
March 03, 2022
Filing Date:
March 28, 2018
Export Citation:
Assignee:
Tohoku University
DOWA Holdings Co., Ltd.
DOWA Holdings Co., Ltd.
International Classes:
H01J1/304; B82Y30/00; B82Y40/00; H01J9/02; H01J63/02; H01J63/06
Domestic Patent References:
| JP2015133196A | ||||
| JP2001043792A |
Attorney, Agent or Firm:
Komatsu Takashi
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