Title:
FIELD EMISSION ELECTRONIC DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3211572
Kind Code:
B2
Abstract:
PURPOSE: To reduce the radius of curvature of a cathode so as to decrease operating voltage by using as a cathode the line of intersection of a stepped level that is at an acute angle to the higher surface of the upper side of a semiconducting substrate and the higher surface, and providing over a lower surface a gate electrode that is insulated and located near the cathode.
CONSTITUTION: A stepped level 3 that is at an acute angle θ to a higher surface 2 is formed on a semiconducting substrate 1 made of Si single crystals. The line 4 of intersection of the stepped level 3 and the higher surface 2 serves as a cathode. The lower end of the stepped level 3 intersects a lower surface 5. A gate electrode 7 is formed on the lower surface 5 and near the cathode 4 with an insulating film 6 between the lower surface 5 and the electrode 7. An electric field is applied between the cathode 4 and the electrode 7 to cause emission of electrons from the cathode 4.
Inventors:
Yoshikazu Hori
Application Number:
JP15353294A
Publication Date:
September 25, 2001
Filing Date:
July 05, 1994
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01J9/02; H01J1/30; H01J1/304; (IPC1-7): H01J1/304; H01J9/02
Domestic Patent References:
| JP4206421A |
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)