PURPOSE: To correctly control a spindle-shaped projection and a gate electrode at the distance in sub-micron by forming a re-sedimentary layer on the surface including the spindle tip portion of the spindle-shaped projection of the gate electrode and the spindle-shaped electrode section of the gate electrode, and uniformly forming a field emission element on a large-area substrate at a high yield.

CONSTITUTION: The spindle-shaped electrode section 6 of a gate electrode 3 is formed in parallel with the wall face of a spindle-shaped projection 4. A re-sedimentary layer 10 formed on the electrode section 6 is extended in the slant face direction of the electrode section 6 from the end face of the electrode section 6 to form a new spindle-shaped electrode section 6. The re-sedimentary layer 10 formed on the surface of the projection 4 is thickest at the spindle tip and thinner toward the lower section on the wall face of the projection 4. The re-sedimentary layer 10 has a projection tip 11 sharper than the spindle tip 5. The projection tip 11 is moved nearer to the gate electrode 3 and its tip radius is made smaller than that of the spindle tip 5, thus the gate threshold value voltage of a field emission element can by made lower.