Title:
集束用突条を備えた電界放出構造
Document Type and Number:
Japanese Patent JP3824637
Kind Code:
B2
Abstract:
A gated field-emission structure contains a emitter electrode (46), an overlying electrically insulating layer (48, and one or more electron-emissive elements (52) situated in one or more apertures extending through the insulating layer. A patterned gate electrode (50) through which each electron-emissive element is exposed overlies the insulating layer. Focusing ridges (54) are situated on the insulating layer on opposite sides of the gate electrode. The focusing ridges, which normally extend to a considerably greater height than the gate electrode, cause emitted electrons to converge into a narrow band.
Inventors:
Spinto, Christopher Jay
Corcoran, Patrick A.
Corcoran, Patrick A.
Application Number:
JP52007895A
Publication Date:
September 20, 2006
Filing Date:
January 30, 1995
Export Citation:
Assignee:
Canon Inc
International Classes:
H01J1/304; H01J29/04; H01J3/02; H01J3/18; H01J29/08; H01J29/62; H01J31/12
Domestic Patent References:
| JP3208241A | ||||
| JP6111737A | ||||
| JP5505906A |
Attorney, Agent or Firm:
Yoichi Oshima