To permit XY address capable of arranging a peripheral circuit comprising a transistor of CMOS or the like and a focusing electrode for focusing an emitted electron beam, equipped with high withstand voltage cathode wiring.

An electron emission region is formed on a projecting part of a silicon substrate 1, and a peripheral circuit region is formed on a recess part. In the electron emission region, a gate insulating layer 10 and a gate electrode 14 are formed on the silicon substrate 1 so as to enclose the periphery of the head part of a cathode 19, and an inter-layer insulating layer 21 and a focusing electrode 43 are formed on the upper layer of the gate electrode 14. On the other hand, in the peripheral circuit region (recess part), an MOC transistor is element-separated by a locus 6, and lead-out wiring 41, 42 are installed on the inter-layer insulating layer 21 for a gate electrode 17, a source and a drain 18.