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Title:
FIELD EMISSION-TYPE ELECTRON SOURCE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP3809808
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a field emission-type electron source, in which the design of a desired insulation resisting voltage and life time is easy, and to provide its manufacturing method.
SOLUTION: A strong field drift layer 6 is constituted of at least grains 51 of pillar-shaped polycrystalline silicon, thin silicon oxide films 52 formed on surfaces of the grains 51 numerous silicon crystallites 63 of nanometer order, existing among the grains 51 and numerous silicon oxide films 64 which are insulating films of film thicknesses smaller than the grain sizes of the silicon crystallites 63 formed on the surface of respective silicon crystallites 63. By rapid heating method, in which the temperature-increase rate is set so that the thicknesses of the silicon oxide films 64 will be film thicknesses, in which tunneling phenomenon is generated, the strong field drift layer 6 is formed by a thermal oxidation of a porous polycrystalline silicon layer formed by a positive electrode oxidation treatment. The temperature-increase rate may be set to be 80°C/sec or higher.


Inventors:
櫟原 勉
菰田 卓哉
相澤 浩一
幡井 崇
馬場 徹
Application Number:
JP2002000153216
Publication Date:
August 16, 2006
Filing Date:
May 28, 2002
Export Citation:
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Assignee:
松下電工株式会社
International Classes:
H01J9/02; H01J1/312; (IPC1-7): H01J1/312; H01J9/02
Domestic Patent References:
JP2001006530A
JP61046966B1
JP3112456B2
JP3687520B2
Foreign References:
Attorney, Agent or Firm:
西川 惠清
森 厚夫