PURPOSE: To prevent lowering of electric conductivity of a gate electrode due to oxidation and deformation of the gate electrode by forming the gate electrode of a field emission type emitter of a high melting point metal silicide.

CONSTITUTION: An insulative film 2 is formed on an conductive substrate 1, and a cavity 2a formed in the film 2, a cathode 3 formed on the substrate 1 inside the cavity 2a, a polycrystal silicon film 4 on the film 2, and a gate electrode 5 are provided. The electrode 5 is formed of a tungsten silicide WSix being a high melting point metal silicide. Since the electrode 5 is formed of the high melting point metal silicide such as WSix, the electrode 5 is not oxidized in a manufacturing process, thereby preventing deterioration of electric conductivity of the electrode 5 due to oxidation. Accordingly, electron emission from the cathode 3 can stably be conducted.