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Patent Searching and Data


Title:
FIELD EMITTING DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH10302610
Kind Code:
A
Abstract:

To enhance the uniformity and improve the productivity by successively laminating first and second electrodes on a cathode electrode having a sharp peak and a cathode electrode from which the peak part is removed through an insulating film.

A field emitting device has a sharp peak formed in a part of a substantially flat field emitting cathode 31. On the surface excluding the peak part of the field emitting cathode electrode 31, a first electrode 33, a second insulating film 34, a second electrode 35 and an insulating film 36 are successively laminated. The upper side of the peak part of the field emitting cathode electrode 31 is opened to form a hole trench. The hole trench forms a passage for the electrons emitted from the peak of the cathode electrode 31. A silicon base 37 is formed so as to be inclined in the direction leaving the trench from a position slightly separated from the hole trench periphery to the upper part, and an insulating film 38 is laminated on the base 37.


Inventors:
KUTSU JIN JOHN
SHOKU HO KAN
Application Number:
JP20622097A
Publication Date:
November 13, 1998
Filing Date:
July 31, 1997
Export Citation:
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Assignee:
LG SEMICON CO LTD
International Classes:
H01J1/30; H01J1/304; H01J9/02; H01J37/317; H01L29/786; (IPC1-7): H01J1/30; H01J9/02
Attorney, Agent or Firm:
Masaki Yamakawa