To provide a method and equipment to produce minutely (0.1 to 0.2nm) different oscillation wavelengths by a semiconductor laser for optical communication in order to solve such a problem that, heretofore, though semiconductor lasers for optical communication having minutely (0.1 to 0.2 nm) different oscillation wavelengths are required, it has been hard to adjust production conditions by semiconductor laser production equipment and to make differences in the oscillation wavelengths, because of insufficiency of resolution performance in a control unit, inferiority of reproducibility in a heating mechanism or the like.

The problem is solved by adding a condition that a susceptor is tilted to the production conditions in the conventional semiconductor laser production equipment. In a film deposition method by a vapor deposition process used upon semiconductor fabrication where a plurality of wafers 8 are set in the disk-shaped susceptor 7, and a material gas is made to flow between the wafers and the confronted face thereof so as to simultaneously deposit films on the many wafers, during the film deposition process, the susceptor is tilted to the confronted face 6a, further, conversely, the confronted face is tilted to the susceptor, and differences are made in distances among the respective wafers and the confronted face thereof, thus the control of making differences in the thickness of the film deposited on each wafer can be performed, and additionally, the control of releasing the tilt and making the susceptor and the confronted face parallel so as to uniformize the thickness of the deposited films can be performed.

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