To provide a film deposition method where the number of procedures can be reduced by easily controlling substrate temperature in an HVPE film growing method and to provide a film-deposited substrate.
The film deposition method comprises a step to support the substrate 16 on a substrate holding part 10 in a treating chamber 110, a heating step to heat the outer periphery 16a of the substrate 16 to be higher in temperature than that of the central portion 16b of the substrate 16 with a heating member 20 located under the substrate 16 and a film deposition step to grow a film on the substrate 16 by the HVPE method. The heating member 20 has a plurality of heaters 14a, 14b and 14c by which temperature can be independently controlled. It is favorable that the temperature of the substrate 16 is controlled by a plurality of heaters 14a, 14b and 14c.
COPYRIGHT: (C)2008,JPO&INPIT
KAMIMURA TOMOYOSHI
FUJIWARA SHINSUKE
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai