Title:
FILM DEPOSITION METHOD OF METAL FILM
Document Type and Number:
Japanese Patent JP2016084508
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a film deposition method of a metal film, the method being able to deposit the metal film having a good adhesion over an entire surface of a resin substrate and having a good mass-productivity.SOLUTION: A film deposition method of a metal film according to the invention arranges a resin substrate W in a vacuum chamber B in which a metal target 2 is arranged, introduces sputtering gas to the vacuum chamber, forms plasma by applying a predetermined voltage to a target, and deposits metal films Mf1, Mf2 on at least one surface of the resin substrate by sputtering the target, the voltage being a pulse voltage, the pulse voltage having a frequency of less than 1 kHz, and a pulse width in a range of 1 μs - 1 ms.SELECTED DRAWING: Figure 3
Inventors:
SUZUKI TOSHIHIRO
SAITO ATSUSHI
AKAMATSU YASUHIKO
TANI NORIAKI
SAITO ATSUSHI
AKAMATSU YASUHIKO
TANI NORIAKI
Application Number:
JP2014217921A
Publication Date:
May 19, 2016
Filing Date:
October 27, 2014
Export Citation:
Assignee:
ULVAC CORP
International Classes:
C23C14/34; C23C14/20; H05K3/14
Domestic Patent References:
| JP2010031359A | 2010-02-12 | |||
| JP2010143177A | 2010-07-01 | |||
| JP2008257134A | 2008-10-23 | |||
| JP2007291477A | 2007-11-08 | |||
| JP2010001505A | 2010-01-07 | |||
| JP2000340166A | 2000-12-08 | |||
| JP2011091082A | 2011-05-06 | |||
| JP2011096741A | 2011-05-12 |
Foreign References:
| WO2014101188A1 | 2014-07-03 |
Attorney, Agent or Firm:
Seiryu Corporation