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Title:
FILM DEPOSITION METHOD, PLASMA GENERATING METHOD, AND SUBSTRATE PROCESSING APPARATUS
Document Type and Number:
Japanese Patent JP2007073539
Kind Code:
A
Abstract:

To suppress metal contamination in a film deposition method for forming an oxynitride film by nitriding a silicon oxide film by remote plasma processing.

When a silicon oxide film is subjected to nitriding, amount of nitriding gas supply to a remote plasma source is set lower than a predetermined level at which energy used for sputtering the gas passage of the remote plasma source begins to increase.


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Inventors:
YAMAZAKI KAZUYOSHI
AOYAMA SHINTARO
IGETA MASANOBU
Application Number:
JP2003421480A
Publication Date:
March 22, 2007
Filing Date:
December 18, 2003
Export Citation:
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Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/318; H01J37/32; H01L21/31; H01L21/314
Attorney, Agent or Firm:
Tadahiko Ito



 
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