To provide a film deposition system where, even in the case of film deposition by a sputtering process, a plasma CVD (chemical vapor deposition) process, a vapor deposition process or the like using charged particles, a constituted film free from film thickness spots can be deposited in a prescribed film deposition region.

A film deposition mask is provided with a ferromagnetic member. The body part is provided with a magnetic flux generation member corresponding to the ferromagnetic member. The magnetic flux generation member has a pair of magnetic poles, and a magnetic flux generated from either magnetic pole in the magnetic flux generation means allows a substrate inserted between the magnetic flux generation member and the ferromagnetic member to pass through, so as to be made to flow to the ferromagnetic member, again allow the substrate to pass through, so as to be absorbed in the magnetic flux generation member. The magnetic flux passing through the ferromagnetic member is set so as to be lower than the product between the saturation magnetic flux density of the ferromagnetic member and the horizontal cross-sectional area of the magnetic flux.