Title:
成膜装置および成膜方法
Document Type and Number:
Japanese Patent JP5191656
Kind Code:
B2
Abstract:
For increasing the film-forming rate and enabling uniform film formation and waste elimination of raw material, a film-forming method and a film-forming apparatus can reach an evaporated film-forming material to a surface of a substrate by the flow of a transport gas so as to control the film-forming conditions by the flow of the gas. Thereby a uniform thin film can be deposited on the large-area substrate. That is, by directing the evaporated raw material toward the substrate, it is possible to increase the film-forming rate and achieve uniform film formation.
Inventors:
Tadahiro Ohmi
Takaaki Matsuoka
Takaaki Matsuoka
Application Number:
JP2006511584A
Publication Date:
May 08, 2013
Filing Date:
March 29, 2005
Export Citation:
Assignee:
大見 忠弘
東京エレクトロン株式会社
東京エレクトロン株式会社
International Classes:
C23C14/24; C23C14/12; C23C14/54; C23C14/56; C23C16/448; F28F13/08; H01L51/50; H05B33/10; H05B33/28; F28F27/02
Domestic Patent References:
| JP2004079904A | 2004-03-11 | |||
| JP2000160328A | 2000-06-13 | |||
| JP2003301255A | 2003-10-24 | |||
| JPH09279346A | 1997-10-28 | |||
| JP2003313654A | 2003-11-06 | |||
| JP2002194548A | 2002-07-10 | |||
| JPH10158820A | 1998-06-16 |
Attorney, Agent or Firm:
Kenho Ikeda
Shuichi Fukuda
Keisuke Yamamoto
Shuichi Fukuda
Keisuke Yamamoto