Title:
FILM FORMATION METHOD AND FILM FORMATION APPARATUS
Document Type and Number:
Japanese Patent JPH05206036
Kind Code:
A
Abstract:
PURPOSE: To make it possible to from a thin film having an excellent in-plane uniformity, ALE condition, crystal quality, acute steepness of heterointerface, and others without damaging a substrate.
CONSTITUTION: A substrate 3 is arranged in a vacuum chamber 1 which is evacuated at a given degree of vacuum and heated. At the same time, with a gas ejection mechanism having a nozzle 6 arranged toward the substrate 3, and a high-speed switching valve 8 which provided near the nozzle 6, a material gas is ejected to the substrate 3 intermittently or continuously to grow crystals on the surface of the substrate 3 for the formation of a film.
Inventors:
AOYANAGI KATSUNOBU
OZASA KAZUNARI
MEGURO TAKASHI
OZASA KAZUNARI
MEGURO TAKASHI
Application Number:
JP1499192A
Publication Date:
August 13, 1993
Filing Date:
January 30, 1992
Export Citation:
Assignee:
RIKAGAKU KENKYUSHO
International Classes:
H01L21/20; H01L21/205; (IPC1-7): H01L21/20; H01L21/205
Attorney, Agent or Firm:
Suyama Saichi
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