Title:
スパッタリングによる成膜方法
Document Type and Number:
Japanese Patent JP4630443
Kind Code:
B2
Abstract:
Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.
Inventors:
Yutaka Echizen
Toshihiro Yamashita
Toshihiro Yamashita
Application Number:
JP2000323176A
Publication Date:
February 09, 2011
Filing Date:
October 23, 2000
Export Citation:
Assignee:
Canon Inc
International Classes:
C23C14/34; C23C14/00; C23C14/08; C23C14/54; C23C14/56; H01B13/00
Domestic Patent References:
| JP2240258A | ||||
| JP9272968A | ||||
| JP10092766A |
Attorney, Agent or Firm:
Tatsuya Nagao