Title:
FILM DEPOSITION METHOD
Document Type and Number:
Japanese Patent JP2022094811
Kind Code:
A
Abstract:
To provide a film deposition method, capable of depositing a film having less impurities in the film and excellent in crystallinity and surface flatness.SOLUTION: A film deposition method comprises: a step of preparing a raw material solution; a mist generation step of generating mist from the raw material solution; a conveyance step of conveying the mist from a mist formation part to a film deposition chamber; and a film deposition step of heating the conveyed mist to deposit a film on a substrate. The step of preparing the raw material solution includes preparing the raw material solution by mixing metal chloride salt or the solution thereof with peroxide or preparing the raw material solution by dissolving metal in the mixed solution of hydrochloric acid and peroxide.SELECTED DRAWING: Figure 1
Inventors:
WATABE TAKENORI
Application Number:
JP2020207903A
Publication Date:
June 27, 2022
Filing Date:
December 15, 2020
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
C23C16/448; H01L21/365; H01L21/368
Domestic Patent References:
| JP2006160600A | 2006-06-22 | |||
| JP2013028480A | 2013-02-07 | |||
| JP2006225738A | 2006-08-31 | |||
| JP2020098818A | 2020-06-25 |
Foreign References:
| US20120027937A1 | 2012-02-02 |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi
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