Title:
FILM FORMATION METHOD AND FILM FORMATION METHOD
Document Type and Number:
Japanese Patent JP2023068928
Kind Code:
A
Abstract:
To provide a technique of forming a silicon nitride film with suitable film quality.SOLUTION: A substrate is placed on a mount table installed in a processing chamber, and processing gas including silicon-containing gas and nitrogen-containing gas is supplied into the processing chamber. On the other hand, first power with a first frequency higher than 300 MHz and second power with a second frequency that is lower than the first frequency are applied to an electrode facing the mount table in the overlapping manner, so that the processing gas in the processing chamber is made into plasma and thus, a silicon nitride film is formed on the substrate. By this method, a silicon nitride film having high tensile stress and film density and suitable film quality can be formed.SELECTED DRAWING: Figure 1
Inventors:
KANEKO MIYAKO
SUZUKI NAOKO
SUZUKI NAOKO
Application Number:
JP2021180387A
Publication Date:
May 18, 2023
Filing Date:
November 04, 2021
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/318; C23C16/42; C23C16/509; H01L21/31
Attorney, Agent or Firm:
Patent Attorney Corporation Yayoi Patent Office
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