Title:
成膜装置及び成膜方法
Document Type and Number:
Japanese Patent JP7080115
Kind Code:
B2
Abstract:
To provide a film deposition apparatus excellent in deposition speed, to which a CVD method can be applied; and to provide a film deposition method excellent in deposition speed.SOLUTION: A film deposition apparatus has an atomization part for generating mist by atomizing raw material solution, a carrier gas feeding part for feeding carrier gas for conveying mist, a film deposition part for depositing on a substrate by heat-treating mist, a conveyance part for connecting the atomization part to the film deposition part, and conveying mist by carrier gas, and conveyance part heating means for heating at least a part of the conveyance part.SELECTED DRAWING: Figure 1
Inventors:
Takenori Watanabe
Hiroshi Hashigami
Hiroshi Hashigami
Application Number:
JP2018122695A
Publication Date:
June 03, 2022
Filing Date:
June 28, 2018
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
C23C16/448; C23C16/455; H01L21/365; H01L21/368
Domestic Patent References:
| JP2016207911A | ||||
| JP2009084625A | ||||
| JP2005217089A |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi
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