Title:
成膜装置及び成膜方法
Document Type and Number:
Japanese Patent JP7100098
Kind Code:
B2
Abstract:
To deposit a film having a high-quality and less variation in the quality by keeping oxygen to an adequate amount.SOLUTION: A film deposition apparatus 1 includes: a chamber 2 being a closed vessel in which a target 231 composed of a film deposition material is arranged, and in the inside of which a workpiece W is carried; an evacuation apparatus 25 producing a base pressure by evacuating the chamber 2 for a predetermined time after the workpiece W is carried in; and a sputtering gas introducing part 27 introducing sputtering gas including oxygen to the inside of the chamber 2 evacuated to the base pressure. The sputtering gas introducing part 27 reduces an oxygen partial pressure of the sputtering gas introduced to the chamber 2 according to an increase in the base pressure due to an increase in an amount of the film deposition material attached to an inside of the chamber 2.SELECTED DRAWING: Figure 1
Inventors:
Daisuke Ono
Application Number:
JP2020170135A
Publication Date:
July 12, 2022
Filing Date:
October 07, 2020
Export Citation:
Assignee:
Shibaura Mechatronics Co., Ltd.
International Classes:
C23C14/34
Domestic Patent References:
| JP1268859A |
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