Title:
FILM-FORMING METHOD AND FILM-FORMING APPARATUS
Document Type and Number:
Japanese Patent JP2001308087
Kind Code:
A
Abstract:
To provide a film-forming method which deposits a tantalum- containing carbon-free oxide film which does not contain carbon.
For depositing a gate oxide film 8, such as tantalum oxide film, etc., on the surface of a work W such as semiconductor wafer, etc., a raw material of tantalum pentachloride solid at room temperature is dissolved in a solvent, e.g. diethyl sulfur in a coordinate bond condition, and it is vaporized and fed into a processing chamber. The processing temperature is set to a comparatively low temperature enough to avoid decomposing diethyl sulfur itself. Thus, the carbon-free tantalum-containing film which does not contain carbon is deposited.
Inventors:
HASEBE KAZUHIDE
OHATA YUUICHIRO
SAI TOKIN
OHATA YUUICHIRO
SAI TOKIN
Application Number:
JP2000126537A
Publication Date:
November 02, 2001
Filing Date:
April 26, 2000
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
C23C16/34; C23C16/40; H01L21/31; H01L21/316; (IPC1-7): H01L21/316; C23C16/34; C23C16/40; H01L21/31
Attorney, Agent or Firm:
Akihiro Asai