To provide a film-forming method for efficiently and inexpensively forming an SiO2 film, an ITO film (transparent electroconductive film), an SnO2 film (ATO and FTO) or the like on a comparatively wide surface of a glass substrate or the like, and to provide a film-forming apparatus therefor.
The method for forming the film on the surface of the substrate with a chemical vapor deposition process by placing the substrate in a film-forming chamber and passing a source gas in a direction along the surface of the substrate comprises: setting a distance between the surface of the substrate and an inner wall of the film-forming chamber to a predetermined distance in the range of about 0.1 mm to about 10.0 mm; and passing the source gas on the surface of the substrate at a predetermined speed in the range of about 0.4 m/sec to about 4.0 m/sec. The film-forming apparatus therefor is also provided.
KAWARAMURA TOSHIYUKI
FUJITA SHIZUO
MASUDA YOSHIO
KAMETANI KEISUKE
MARUYAMA NORIHIKO
EMTEC CO LTD
CERAMIC FORUM CO LTD
JPS4942423B1 | 1974-11-14 | |||
JPH0917732A | 1997-01-17 | |||
JPH0578151A | 1993-03-30 | |||
JPH08124859A | 1996-05-17 | |||
JPH0794419A | 1995-04-07 | |||
JPH0366121A | 1991-03-20 | |||
JPH0620961A | 1994-01-28 | |||
JPS63233521A | 1988-09-29 |
Makoto Suhara