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Title:
FILM-FORMING METHOD AND FILM-FORMING APPARATUS
Document Type and Number:
Japanese Patent JP2005307238
Kind Code:
A
Abstract:

To provide a film-forming method for efficiently and inexpensively forming an SiO2 film, an ITO film (transparent electroconductive film), an SnO2 film (ATO and FTO) or the like on a comparatively wide surface of a glass substrate or the like, and to provide a film-forming apparatus therefor.

The method for forming the film on the surface of the substrate with a chemical vapor deposition process by placing the substrate in a film-forming chamber and passing a source gas in a direction along the surface of the substrate comprises: setting a distance between the surface of the substrate and an inner wall of the film-forming chamber to a predetermined distance in the range of about 0.1 mm to about 10.0 mm; and passing the source gas on the surface of the substrate at a predetermined speed in the range of about 0.4 m/sec to about 4.0 m/sec. The film-forming apparatus therefor is also provided.


Inventors:
NISHINAKA HIROYUKI
KAWARAMURA TOSHIYUKI
FUJITA SHIZUO
MASUDA YOSHIO
KAMETANI KEISUKE
MARUYAMA NORIHIKO
Application Number:
JP2004122834A
Publication Date:
November 04, 2005
Filing Date:
April 19, 2004
Export Citation:
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Assignee:
FUJITA SHIZUO
EMTEC CO LTD
CERAMIC FORUM CO LTD
International Classes:
C23C16/455; H01L21/28; H01L21/285; H01L21/316; H01L21/365; (IPC1-7): C23C16/455; H01L21/28; H01L21/285; H01L21/316; H01L21/365
Domestic Patent References:
JPS4942423B11974-11-14
JPH0917732A1997-01-17
JPH0578151A1993-03-30
JPH08124859A1996-05-17
JPH0794419A1995-04-07
JPH0366121A1991-03-20
JPH0620961A1994-01-28
JPS63233521A1988-09-29
Attorney, Agent or Firm:
Yoshiyuki Kaji
Makoto Suhara