To provide a film forming method and a film forming device capable of forming a film of satisfactory morphology, without complicating constitution of a film forming device, and capable of enhancing an operation efficiency of the film forming device.
A liquid-like film forming raw material liquid formed by dissolving a film forming raw material into a solvent is supplied onto a surface of a semiconductor substrate 28, in a film forming raw material deposition chamber 17, the solvent contained in the film forming raw material liquid is phase-changed from the liquid to a gas, the film forming raw material dissolved in the solvent is thereby deposited onto the semiconductor substrate 28, the film forming raw material formed on the surface of the semiconductor substrate 28 is reacted thereafter by heating or by addition of a reaction reagent, in a reaction chamber 18 different from the film forming raw material deposition chamber 17, and the film is formed thereby on the surface of the semiconductor substrate 28.
| JPH03166382A | 1991-07-18 |
Tadashi Takahashi
Naoki Ofusa
Kazunori Onami