Title:
FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS
Document Type and Number:
Japanese Patent JP2023043295
Kind Code:
A
Abstract:
To achieve both improvements in embedding performance and in productivity when embedded into a recessed part using adsorption inhibition.SOLUTION: A film deposition method capable of depositing a film in a recessed part formed on the surface of a substrate comprises the steps of: supplying adsorption inhibition gas to the substrate to form an adsorption inhibition area; supplying silicon-containing gas to the substrate to adsorb the silicon-containing gas in an area except the adsorption inhibition area; and exposing the substrate to nitrogen-containing gas to react the substrate with the adsorbed silicon-containing gas and deposit a silicon nitride film. The step of adsorbing the silicon-containing gas comprises controlling the dose amount of the supplied silicon-containing gas to an amount equal to or more than the adsorption saturation content of the silicon-containing gas adsorbed on the substrate in which the adsorption inhibition area is not formed.SELECTED DRAWING: Figure 9
Inventors:
OTSUKI YUJI
KAGAYA MUNEHITO
SUZUKI YUSUKE
KAGAYA MUNEHITO
SUZUKI YUSUKE
Application Number:
JP2021150819A
Publication Date:
March 29, 2023
Filing Date:
September 16, 2021
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/318; C23C16/04; C23C16/34
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito