Title:
FILM FORMING METHOD
Document Type and Number:
Japanese Patent JPS5748225
Kind Code:
A
Abstract:
PURPOSE:To obtain a semi-amorphous film which is suitable for a high-efficiency photoelectric transducer, by a method wherein, Si, Ge or compound of them is activated and clusterized at the position apart from a substrate and these clusters are adhered to the substrate so as to form a film. CONSTITUTION:An activation chamber 1 is provided at the position apart from a reaction chamber 7 which contains a boat 9 on which a substrate 10 is mounted. Reactive gas mach as silane is introduced from bombs 4-6 into the chamber 7 so as to be excited or activated or degenerated by induction energy of 0.1-10GHz generated by an oscillator 3 and transmitted by an isolator matching device 2 and is condensed to form clusters. The clusters are adhered and accumulated on the substrate 10 to form a film. With the above method a semi-amorphous semiconductor film which has intermediate properties inbetween a crystalline semiconductor and an amorphous semiconductor and is suitable for a high-efficiency photoelectric transducer is obtained.
Inventors:
YAMAZAKI SHIYUNPEI
Application Number:
JP12278780A
Publication Date:
March 19, 1982
Filing Date:
September 04, 1980
Export Citation:
Assignee:
HANDOTAI ENERGY KENKYUSHO
International Classes:
H01L31/04; C23C16/511; H01L21/205; H01L31/20; (IPC1-7): H01L21/205; H01L31/04
Domestic Patent References:
| JPS5478524A | 1979-06-22 |
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