To provide a film having permittivity which can be controlled by external stimulation and can be varied by light irradiation, and to provide an electronic device using the same.
A thin film transistor 20 includes a glass substrate 21, a gate electrode 22, a gate insulating film 23, a semiconductor layer (active layer) 24, a source electrode 25 and a drain electrode 26. The gate electrode 22, the gate insulating film 23 and the semiconductor layer 24 are laminated on the glass substrate 21 in this order. The source electrode 25 and the drain electrode 26 are formed on the semiconductor layer 24. The gate insulating film 23 is formed by spin-coating the gate insulating film formed on the glass substrate with a solution containing an organic polymer and a compound dispersed in the organic polymer. The compound is at least one kind of a compound selected from a compound represented by a formula (1) and a compound represented by a formula (2). In the formula (1), R1 is a hydrogen atom or alkyl of 1-10C, R2 is aromatic a hydrocarbon of 6-20C, X is anion, and q is equal to the valence of X. In the formula (2), R3 is one of a hydrogen atom, alkyl, hydroxyl, alkyloxy, acyloxy, alkyloxycarbonyl, an alicyclic ring, an aromatic ring, a complex aromatic ring and the like, and R4-R6 is one of a hydrogen atom, alkyl, an alicyclic ring, an aromatic ring, and an complex aromatic ring, independently.
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SAKAI HEIYU
FUKUZUMI SHUNICHI
OKUBO TAKASHI
MURAKAMI MOTONOBU
UNIV OSAKA
| JP2004230762A | 2004-08-19 | |||
| JPH06507661A | 1994-09-01 |
Shigeru Kuroda
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