PURPOSE: To form good quality and uniform amorphous semiconductor films on substrates in a short time, in a vacuum vapor phase method, by providing a gas plasma converting region and a semiconductor deposition region, and using at least He and Ne gases as carrier gas.

CONSTITUTION: Mixed gases F of semiconductor compound A (SiH4, SiF4, etc.) are converted to plasma by using the reaction pipe 1 consisting of a gas lead-in part 2, a plasma converting region 3 provided with a high frequency source 6, a semiconductor deposition region 4 provided with a high frequency source 9 for orientation and a heating source 10 and erected with substrates 7, and a gas lead-out part 5 and using at least He, Ne as a carrier gas E, whereby homogeneous amorphous silicon semiconductor films are formed in a short time on the substrates 7 of a low pressure normal state and ≤700°C temperature. It is also possible to contain respective impurity compounds B, C of n type and p type and successively laminate and form these layers on the substrates. This method makes possible volume production with multiple substrates.