To prevent latent image pattern from expanding, when a resist is exposed to light by electron beam irradiation or the like by applying the resist to a film to be processed with charges stored on its surface in advance, and then exposing the resist to an electron beam or the like.

A dielectric layer 22 is formed on a base layer 21, and the workpiece is placed on the wafer stage of an electron beam exposure system. A first region A at the upper part of the dielectric layer 22 is irradiated with an electron beam with a current amount of, for example, 1×1011-1×109 A according to image data for preliminary exposure. As a result, negative charges with a charge density of, for example, 90 to 200 μC/cm2 remain on the surface of the dielectric layer 22. The workpiece is placed on a resist coater, and a negative EB resist layer 23 is formed on the dielectric layer 22. The workpiece is placed on the wafer stage of the electron beam exposure system again, and a second region B where the dielectric layer 22 is to be left is irradiated with an electron beam for exposing the EB resist layer 23 to light.