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Patent Searching and Data


Title:
FINE AU ALLOY WIRE FOR BONDING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP01127635
Kind Code:
A
Abstract:

PURPOSE: To improve the heat resistance of a fine Au alloy wire for bonding and the strength at ordinary temp. and high temp. and to stabilize loops by incorporating a specified amt. of one or more among La, Ce, Pr, Nd and Sm and a specified amt. of Ge and/or Be into the Au alloy wire.

CONSTITUTION: The compsn. of a fine Au alloy wire for bonding a semiconductor device is composed of 0.2W2.5ppm one or more among La, Ce, Pr, Nd and Sm, 1W15ppm Ge and/or Ge and the balance Au with inevitable impurities. The Au alloy has superior heat resistance and strength at high temp. and ordinary temp. The Au alloy wire can form stable loops of large and nearly uniform height at the time of bonding, and the deformation of the loops by the effect of heat in a bonding stage and the flowing of the loops by the effect of heat in a subsequent resin molding stage can be inhibited.


Inventors:
Hosoda, Naoyuki
Tanaka, Masayuki
Mori, Tamotsu
Application Number:
JP1987000282686
Publication Date:
May 19, 1989
Filing Date:
November 09, 1987
Export Citation:
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Assignee:
MITSUBISHI METAL CORP
International Classes:
C22C5/02; H01L21/60; (IPC1-7): C22C5/02