Title:
FINE PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP3676752
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a fine pattern forming method excellent in controllability of pattern dimensions, capable of obtaining a fine pattern having good profile and properties required in a semiconductor device and free of occurrence of defects as a fine pattern forming method in which the top of a substrate having photoresist patterns is coated with a coating forming agent.
SOLUTION: In the fine pattern forming method, the top of a substrate having photoresist patterns is coated with a coating forming agent for increasing fineness of a pattern, the coating forming agent is heat-shrunk by a heat treatment, the interval between the photoresist patterns is narrowed by utilizing the heat shrinkage, the coating forming agent is then removed by contact with a removing solution containing at least one selected from aqueous alkali solutions and water-soluble organic solvents, and water washing is carried out.
Inventors:
Fumitake Kaneko
Masaki Suda
Toshikazu Tachikawa
Masaki Suda
Toshikazu Tachikawa
Application Number:
JP2002121210A
Publication Date:
July 27, 2005
Filing Date:
April 23, 2002
Export Citation:
Assignee:
Tokyo Ohka Kogyo Co., Ltd.
International Classes:
G03F7/40; G03F7/20; H01L21/027; (IPC1-7): G03F7/40; H01L21/027
Domestic Patent References:
| JP11204399A | ||||
| JP7045510A | ||||
| JP2001019860A | ||||
| JP2001109165A | ||||
| JP2001281886A |
Attorney, Agent or Firm:
Yoko Hasegawa