PURPOSE: To process a single-crystal silicide and silicon fine and with high accuracy by a method wherein, after the single-crystal silicide has been grown on a silicon substrate, the silicide is processed by using a photoresist method and, in succession, the silicide is processed fine by using an anisotropic etching operation.
CONSTITUTION: Single crystal NiSi2 6 is grown on an Si (111) substrate 1. A resist film 3 having a desired PBT pattern is formed on the Si substrate 1 by using a photoresist method; the inessential NiSi2 is removed. After that, the resist film 3 is stripped; the surface is cleaned; a gate pattern of NiSi2 is formed; an anisotropic etching operation is executed; the crystal plane orientation of the sidewall of a silicide which is etched anisotropically and chemically is changed to (110). Thereby, both a thin-line shape and a cross-sectional shape are changed to rectangular shapes. Then, an anisotropic dry etching operation is executed by making use of the NiSi2 as a mask; the Si substrate is etched. This specimen is put again into an ultrahigh vacuum apparatus; the single- crystal NiSi2 is grown; a half-buried type PBT is manufactured.
OSHIMA TAKU
NAKAGAWA KIYOKAZU
MIYAO MASANOBU
