PURPOSE: To perform a submicron-order fine processing by a self alignment method by forming the length of the eaves of a T-shaped dummy pattern with the film thickness of the side wall film, thereby obtaining a T-shaped dummy pattern which is very good in controllability and is uniform.
CONSTITUTION: On a semiconductor substrate 11, a first pattern 12a is formed which consists of a first insulating film and has side walls substantially vertical to the substrate 11. Part of the pattern 12a is exposed, and a second insulating film 15 covering the whole surface of the substrate 11 is formed. After forming a side wall film 17a consisting of a third insulating film 17 on the side walls of exposed part, the insulating film 15 is removed. Hereupon, the length l of the eaves of a fine dummy pattern having a T-shaped cross section is determined by the film thickness of the side wall film 17a. With this, a T-shaped dummy pattern is obtained which is very good in controllability and is uniform, and a submicron-order fine processing by a self alignment method is preformed.
NAKAGAWA ATSUSHI
INADA MASAKI
