FINE SILICON PARTICLES

Title:

FINE SILICON PARTICLES

Document Type and Number:

Japanese Patent JPH09169513

Kind Code:

A

Abstract:

To obtain fine Si particles having a large surface area and an open three-dimensional network structure by evaporating metallic Si in the lower part of a chamber by irradiation with pulsated laser in the presence of oxygen- free inert carrier gas and carrying out cooling.

A vacuum chamber is composed of two horizontal circular stainless steel places separated with a circular glass ring, a metallic Si rod is fitted near the lower plate and oxygen-free insert carrier gas is introduced into the chamber. The Si rod is evaporated by irradiation with pulsated laser from Y-Al-garnet-Nd laser through a mirror to generate metallic Si vapor and metallic Si atoms in the vapor are clustered in the chamber. The resultant cluster is condensed on a cooling plate cooled to ≤120°K to obtain a porous material consisting of fine Si particles of 5-50nm diameter and emitting luminescence of 600-640nm max. wavelength after irradiation with UV.

Inventors:

MOHAMETSUDO SAMII SEIDO ERUUSH
DANIERU GUREIBAA
UDO SHII PEANISU

Application Number:

JP30634596A

Publication Date:

June 30, 1997

Filing Date:

November 18, 1996

Export Citation:

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Assignee:

DOW CORNING

International Classes:

B01J2/00; B01J19/12; C01B33/02; H01L33/34; (IPC1-7): C01B33/02; B01J2/00; B01J19/12

Attorney, Agent or Firm:

Warren G. Simor

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