Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3130219
Kind Code:
B2
Abstract:
PURPOSE: To provide a semiconductor device for power control such as a triac, having a small chip size and capable of performing zero-cross operation without the necessity of optical input.
CONSTITUTION: Concerning a thyristor 32 capable of forming a triac by joining thyristors having the same structure in reverse parallel, the gate electrode 71 of a MOSFET 39 provided for performing zero-cross operation in the thyristor 32 is charged by leakage current from a diode section 41. Since conductive films 77a, 77b out of oxygen-doped semi-insulating polysilicon are formed on the surface of a PN junction composed of an N+-type substrate 53 and a P+-type diffusion region 76 forming a diode section 41, leakage current supplied from the diode section 41 increases, and it becomes possible to perform zero-cross operation surely even if there is not any optical input.
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Inventors:
Isamu Ohkubo
Application Number:
JP32620494A
Publication Date:
January 31, 2001
Filing Date:
December 27, 1994
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L29/74; H01L21/06; H01L21/822; H01L27/06; H01L29/747; H01L29/749; H03K17/13; H03K17/567; H03K17/78; (IPC1-7): H01L29/747; H01L21/06; H01L21/822; H01L29/74; H01L29/749; H03K17/13; H03K17/567; H03K17/78
Domestic Patent References:
| JP7254696A | ||||
| JP6449265A | ||||
| JP5291563A | ||||
| JP4249370A | ||||
| JP6074678A | ||||
| JP6252384A | ||||
| JP4304675A | ||||
| JP4162570A | ||||
| JP5213773A |
Attorney, Agent or Firm:
Keiichiro Saikyo
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