Title:
FLAT PATE MAGNETRON SPUTTERING DEVICE
Document Type and Number:
Japanese Patent JP3499910
Kind Code:
B2
Abstract:
PURPOSE: To efficiently supply electrons to a discharge space above a target and drop a discharge voltage by arranging an annular magnet behind an annular electron source near the outer periphery of the target.
CONSTITUTION: The annular magnet 72 is arranged behind the electron source 38 near the outer periphery of the target 26. A release direction 51 of the electrons released from an electron release port 46 is parallel with the surface of the target 26. The magnetic pole (S pole) on the electron source side of the magnet 72 and the magnetic pole (N pole) on the target of the outer magnet 33 on the rear surface of the target 26 is of an opposite polarity. As a result, the direction in the electron release port 46 of the magnetic lines 74 of force passing the electron release port 46 is paralleled with an electron release direction 51. The electrons are efficiently transported to above the target 26 along the magnetic lines 74 of force and a large quantity of the electrons are supplied to the discharge space on the target 26. Consequently, the ionization of a sputtering gas is accelerated, by which the plasma density is increased and the discharge voltage is effectively dropped.
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Inventors:
Keiji Ishibashi
Application Number:
JP34116193A
Publication Date:
February 23, 2004
Filing Date:
December 13, 1993
Export Citation:
Assignee:
ANELVA Co., Ltd.
International Classes:
C23C14/35; (IPC1-7): C23C14/35
Domestic Patent References:
| JP6372875A | ||||
| JP5710329A | ||||
| JP6455815A | ||||
| JP6220866A |
Attorney, Agent or Firm:
Toshiyuki Suzuki
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