平型のまたは筒型のスパッタリングターゲットならびにその製造方法

Japanese Patent JP5479627

B2

Planar sputtering target with an area of greater than 0.3 m 2> or tubular sputtering target with a length of at least 1 m, comprises a silver-based alloy with 0.01-5 wt.% at least one further alloy component comprising indium, tin, antimony or bismuth; and a crystal structure with an average grain size of less than 120 mu m, an oxygen content of less than 50 mg/kg, impurity elements of less than 0.5 mg/kg, which comprises aluminum, lithium, sodium, calcium, magnesium, barium and chromium of, and a metal purity of at least 99.99 wt.%. An independent claim is also included for producing a planar sputtering target with an area of greater than 0.3 m 2> or a tubular sputtering target with a length of at least 1 m, comprising melting an alloy that comprises silver and at least one further alloy component comprising indium, tin, antimony or bismuth; casting the melt into a mold to form a molded article of the silver-base alloy; and forming the molded body to the sputtering target. The melting takes place by induction melting under reducing conditions by adjusting an oxygen content of less than 50 mg/kg.

Martin Schlot
Sabine Schneider-Betts
Uwe Konitska
Marks Schilt Heiss
Ben Calle
Lars Abel

JP2013078389A

April 23, 2014

April 04, 2013

Click for automatic bibliography generation  

Heraeus Materials Technology GmbH & Co. KG

C23C14/34; C22B5/10; C22B9/18; C22B11/02; C22C1/02; C22C1/06; C22C5/06; C22F1/14; C22F1/00

JP5159962B2
JP5159963B2
JP2006070345A
JP2005008983A
JP2004084065A

Einzel Felix-Reinhard
Takuya Kuno

Previous Patent: 車載情報装置及び電気自動車用情報転送システム

Next Patent: DEVICE FOR READING AND ELECTROSTATICALLY RECORDING DOCUMENT