PURPOSE: To obtain high speed thermal response, by forming a first thermistor element and a second thermistor element on one surface of a flat shaped insulating substrate in close vicinity to each other and removing a part of either one of the thermistor elements.
CONSTITUTION: A first temp. sensitive resistor film 21 and a pair of first electrode films 31 are formed to one surface of a flat plate shaped quartz substrate 1 to constitute a first thermistor element A. In the same way, a second temp. sensitive resistor film 22 and a pair of second electrode films 32 are formed to a second thermistor element B. In this case, the flat plate shaped quartz substrate 11 at the part where the first temp. sensitive resistor film 21 was formed is chemically dissolved and removed by HF. When the thickness of the flat plate shaped quartz substrate was set to 0.5mm and that of the first temp. sensitive resistor film 21 to 2W6μm and the temp. sensitive quartz substrate 11 was further removed, high speed thermal response with a constant of 5sec or less at the time of heating is obtained.
YAMAMOTO KAZUSHI
ISHIGURO TOSHIYUKI
