Title:
流体分析装置
Document Type and Number:
Japanese Patent JP2009501927
Kind Code:
A
Abstract:
A gas analyser (12) comprises a transistor (1) that has a cavity (7) between its gate (2) and its organic semiconductor (6) based conducting channel. In operation a component from a gas sample introduced into the cavity (7) may absorb onto an exposed absorption sensitive surface portion of the organic semiconductor (6). A detector (13) detects a change in the threshold voltage of the transistor caused by the component absorbing on the exposed surface portion. In response to detecting this change, the detector generates a measurement signal indicative of a concentration of the component in the sample.
Inventors:
Willalto, Nikolaas
Seteyesh, Sepas
Leeuw, Dahobert Michel
Seteyesh, Sepas
Leeuw, Dahobert Michel
Application Number:
JP2008522106A
Publication Date:
January 22, 2009
Filing Date:
July 06, 2006
Export Citation:
Assignee:
Koninklijke Philips Electronics N.V.
International Classes:
G01N27/00; G01N27/414
Domestic Patent References:
| JP2007526476A | 2007-09-13 | |||
| JP2007500342A | 2007-01-11 | |||
| JPH10186A | 1998-01-06 | |||
| JPS58129239A | 1983-08-02 | |||
| JP2002310969A | 2002-10-23 | |||
| JP2005123290A | 2005-05-12 | |||
| JPH02123768A | 1990-05-11 |
Attorney, Agent or Firm:
Tadahiko Ito
Shinsuke Onuki
Tadashige Ito
Shinsuke Onuki
Tadashige Ito