Title:
蛍光ダイヤモンドおよびその製造方法
Document Type and Number:
Japanese Patent JP7429367
Kind Code:
B2
Abstract:
The present invention provides a fluorescent diamond containing an MV center emitting fluorescence at a concentration of 1 × 1014/cm3 or higher, where M represents a metal or metalloid, and V represents a vacancy.
Inventors:
Hajime Nakao
Shinji Nagamachi
Masahiro Nishikawa
Liu Ming
Shinji Nagamachi
Masahiro Nishikawa
Liu Ming
Application Number:
JP2019196514A
Publication Date:
February 08, 2024
Filing Date:
October 29, 2019
Export Citation:
Assignee:
Daicel Corporation
Nagamachi Science Lab Co., Ltd.
Kyushu Institute of Technology
Nagamachi Science Lab Co., Ltd.
Kyushu Institute of Technology
International Classes:
C09K11/65; C09K11/08; C09K11/66; C30B29/04
Domestic Patent References:
| JP2013189373A | ||||
| JP2012041406A | ||||
| JP2010526746A | ||||
| JP2014095025A | ||||
| JP2005306674A | ||||
| JP2009046319A | ||||
| JP2016113310A | ||||
| JP2016117633A |
Other References:
小副川裕太 ほか,イオン注入によるCVD ダイヤモンド膜へのSiV センターの導入,応用物理学会春季学術講演会講演予稿集(CD-ROM),(2015), Vol.62,ROMBUNNO.11P-C1-17
加賀美理沙 ほか,イオン注入を用いたSiV センターの作製と生成収率の エネルギー依存性評価,応用物理学会秋季学術講演会講演予稿集(CD-ROM),(2016), Vol.77,ROMBUNNO.13p-A26-15
LAGOMARSINO,S. et al.,Optical properties of silicon-vacancy color centers in diamond created by ion implantation and post-annealing,Diamond and Related Materials,(2018), Vol.84,Page.196-203
加賀美理沙 ほか,イオン注入を用いたSiV センターの作製と生成収率の エネルギー依存性評価,応用物理学会秋季学術講演会講演予稿集(CD-ROM),(2016), Vol.77,ROMBUNNO.13p-A26-15
LAGOMARSINO,S. et al.,Optical properties of silicon-vacancy color centers in diamond created by ion implantation and post-annealing,Diamond and Related Materials,(2018), Vol.84,Page.196-203
Attorney, Agent or Firm:
Saegusa International Patent Office