To obtain a fluorobenzyl ether derivative, having a low-melting point, a relatively high clearing point, a low polarity and further a relatively low threshold potential and useful for a thin-film transistor cell.

This fluorobenzyl ether derivative is expressed by formula I [R1 is a (F-substituted)1-5C alkyl, a (F-substituted)3-5C alkenyl, etc.; X is H or F; A and B are each a (mono- or disubstituted)trans-1,4-cylohexylene, a (mono- or disubstituted)1,4-phenylene, etc.; Z1 and Z2 are each a single bond, C2H4, O-CH2, C≡C, etc.; R2 is a (F-substituted)2-12C alkyl, a (F-substituted)2-12C alkenyl, etc.; (n) is 0 or 1], e.g. 4-[trans-4-(trans-4-vinyl-cyclohexyl)cyclohexyl]-2- fluorobenzyl methyl ether. The compound of formula I is obtained by decomposing a compound of formula II (R3 is a group of formula III) with an acid, converting the compound of formula II into a carboxylic acid, then reducing the prepared carboxylic acid, providing a compound of formula IV and further reacting the resultant compound of formula IV with a compound of the formula R1I.