Title:
【発明の名称】固体撮像装置の製造方法
Document Type and Number:
Japanese Patent JP3076415
Kind Code:
B2
Abstract:
PURPOSE:To prevent impurity ions from implanted into the surface part of a substrate through a conductive film, and suppress the occurrence of a dark current or a residual image by performing the etching of a conductive film and the formation of an impurity region, using the same resist film. CONSTITUTION:When forming an n-type impurity region 17 by implanting impurity ions at high accelerating voltage, a polycrystalline silicon film 16a and a resist film 15 are used as masks. This polycrystalline silicon film 16a is etched with the same resist film 15 as a mask, so the end face accords with the end face of the resist film 15. Accordingly, a mask with an thickness enough even at the end can be obtained. Therefore, even if impurity ions are implanted at high accelerating voltage, the impurity ions never penetrate the polycrystalline silicon film 16a and reach the surface part of a semiconductor substrate 11, and the boundary of the n-type impurity region 17 and the end face of the polysilicon film 16a stand in a line vertically. Thus, the occurrence of a residual image or a dark current can be suppressed.
Inventors:
Makoto Monoi
Application Number:
JP20434291A
Publication Date:
August 14, 2000
Filing Date:
August 14, 1991
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L27/146; H01L31/10; (IPC1-7): H01L27/146; H01L31/10
Domestic Patent References:
| JP4214670A | ||||
| JP56992A | ||||
| JP6273662A |
Attorney, Agent or Firm:
Kazuo Sato (3 others)