PURPOSE: To enable anode bonding between a pressure detecting surface in a wafer state and a force transmitting part made of glass, and facilitate mass production of force conversion elements, in a force conversion element pattern which is arranged on an N-type semiconductor and has a plurality of P-type acceptor diffusion layers.

CONSTITUTION: P-type acceptor diffusion layers 12 having a specified thickness are formed on the surface of an N-type donor diffusion layer 11. Electrodes 13a, 13b, 14a, 14b electrically connected with only the layers 12 via an insulating layer 15 are formed. Connection wires 17 for connecting the electrodes 13a, 13b, 14a, 14b are formed. When a plurality of the P-type acceptor diffusion layers 12 and a force transmitting part of a glass wafer are subjected to anode bonding, all of the P-type acceptor diffusion layers 12 are kept at nearly equal potentials which are higher than the potential of the N-type donor diffusion layer 11. As a result, a backward voltage is not applied across the N-type donor diffusion layer 11 and the P-type acceptor diffusion layers 12.