Title:
FORM SIMULATION METHOD
Document Type and Number:
Japanese Patent JP2803649
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To speedily forecast forms of a trench gap or a contact hole by calculating an incident flux by means of shadowing in which a range is reduced and which is a form simulation method forecasting a machining form of a semiconductor integrated circuit.
SOLUTION: When incident fluxes from surfaces of a vapor phase and other material are calculated to forecast a machining form of a semiconductor integrated circuit, a method in which a range is narrowed down by shadowing is provided. The calculation of the incident flux from the vapor phase is performed by using an analytic function of which an opening angle of the shadowing (404μ) is integrated. The calculation of the incident flux from material surfaces (a trench gap, a contact hole, etc) is performed by using an analytic function of which an angle around an axis of the shadowing is integrated. By the means the form simulation for forms with axis symmetries such as the trench gap, the contact hole, etc., is performed in a high speed and in a high precision.
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Inventors:
Tsutomu Niizawa
Application Number:
JP21990196A
Publication Date:
September 24, 1998
Filing Date:
August 21, 1996
Export Citation:
Assignee:
NEC
International Classes:
G06F17/50; H01L21/00; H01L21/02; H01L21/205; H01L21/28; (IPC1-7): H01L21/00; H01L21/02; H01L21/205; H01L21/28
Domestic Patent References:
| JP8171549A |
Attorney, Agent or Firm:
Wakabayashi Tadashi