Title:
FORMATION OF BUMP ELECTRODE OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3134586
Kind Code:
B2
Abstract:
PURPOSE: To provide a method of forming bump electrodes, by which the bump electrodes of a uniform height are obtained and at the same time, a burn-in test and a prescribed inspection of electrical characteristics can be executed in the forming process of the electrodes.
CONSTITUTION: Metal material layers 3 for bonding by heating are respectively formed on electrodes 2 on a circuit board 1 arranged with the electrodes 2 in such a way as to correspond to electrodes 6 under the lower part of a semiconductor element 5. The electrodes 6 under the lower part of the element 5 and the electrodes 2 on the board 1 are made to bond together via the layers 3 and after the electrical performance of the element 5 is inspected through the electrodes 2 on the board 1, the layers 3 are left on the side of the element 5 and the element 5 is detached from the board 1, whereby the uniform bump electrodes 3 can be formed en bloc by a simple method and at the same time, a burn-in test and an electrical inspection can be also made at low cost and reliably in the forming process of the electrodes 3.
Inventors:
Yasuyuki Baba
Application Number:
JP8309093A
Publication Date:
February 13, 2001
Filing Date:
April 09, 1993
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L21/66; H01L21/321; H01L21/60; (IPC1-7): H01L21/60; H01L21/66
Domestic Patent References:
| JP6268201A | ||||
| JP5190552A |
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)