Title:
FORMATION OF CHEMICAL AMPLIFICATION RESIST PATTERN
Document Type and Number:
Japanese Patent JP3158710
Kind Code:
B2
Abstract:
PURPOSE: To improve the accuracy of the pattern shapes of a chemical amplification resist and to improve the resolution thereof in the method for formation of the patterns of the chemical amplification resist to be used at the time of forming patterns of semiconductor devices.
CONSTITUTION: This method includes a stage for applying the chemical amplification resist 3 on a substrate 1 or a film 2 formed on this substrate 1, a stage for applying a film 5 consisting of non-crystalline polyolefins on the chemical amplification resist 3, then subjecting the resist to a heat treatment, a stage for forming latent image patterns by allowing ionization radiations to transmit the film 5 to expose the chemical amplification resist 3 and a stage for removing the film 5, then sensitizing the latent image patterns by developing the chemical amplification resist 3.
More Like This:
| JP3277652 | DRY ETCHING METHOD |
| JPH11283901 | MANUFACTURE OF SEMICONDUCTOR DEVICE AND EXPOSURE METHOD |
| JP2593611 | LITHOGRAPHY ETCHING METHOD |
Inventors:
Akira Oikawa
Hiroyuki Tanaka
Masayuki Oie
Hideyuki Tanaka
Nobunori Abe
Hiroyuki Tanaka
Masayuki Oie
Hideyuki Tanaka
Nobunori Abe
Application Number:
JP24673492A
Publication Date:
April 23, 2001
Filing Date:
September 16, 1992
Export Citation:
Assignee:
Nippon Zeon Co., Ltd.
International Classes:
G03F7/26; G03F7/00; G03F7/039; G03F7/11; G03F7/20; G03F7/38; H01L21/027; G03F7/004; (IPC1-7): G03F7/38; H01L21/027
Domestic Patent References:
| JP63287950A | ||||
| JP263114A | ||||
| JP57183030A | ||||
| JP56140341A | ||||
| JP4204848A | ||||
| JP574700A |
Attorney, Agent or Firm:
Keizo Okamoto