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Title:
FORMATION OF CHROMIUM NITRIDE FILM
Document Type and Number:
Japanese Patent JPH05311396
Kind Code:
A
Abstract:

PURPOSE: To form a chromium nitride film even on a substrate low in heat resistance and to increase the kinds of substrate capable of being coated with a chromium nitride film.

CONSTITUTION: A chromium nitride film 12 is formed on the surface of a substrate 11 by the vacuum deposition of a substance contg. chromium and the irradiation A1 with nitrogen ion, and hence a mixed layer 13 of the substrate material, chromium and nitrogen is formed at the interface between the substrate 11 and the chromium nitride film 12. In this case, the substrate 11 need not be heated when the film is formed, hence even a substrate 11 low in heat resistance can be used, and the kinds of the substrates 11 capable of being coated with a chromium nitride film are increased.


Inventors:
KURATANI NAOTO
OGATA KIYOSHI
NISHIYAMA SATORU
EBE AKINORI
Application Number:
JP12076992A
Publication Date:
November 22, 1993
Filing Date:
May 13, 1992
Export Citation:
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Assignee:
NISSIN ELECTRIC CO LTD
International Classes:
C23C14/06; C04B41/50; C23C14/22; (IPC1-7): C23C14/06; C23C14/22
Attorney, Agent or Firm:
Miyai Akio



 
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